FDMC8010 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description April 2014
* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
* High performance technolo.

Application

where ultra low rDS(on) is required in small spaces such as High performance VRM, POL and Oring functions. Applications.

Description

April 2014
* Max rDS(on) = 1.3 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 1.8 mΩ at VGS = 4.5 V, ID = 25 A
* High performance technology for extremely low rDS(on)
* Termination is Lead-free and RoHS Compliant This N-Channel MOSFET.

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